sot-89 1. base 2. collector 3. emitter sot-89 plastic-encapsulate transistors transistor (npn) features z low collector-emitter saturation voltage z large collector power dissipation z mini power type package maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10a,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =2ma,i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 5 v collector cut-off current i cbo v cb =20v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a h fe(1) v ce =10v, i c =500ma 85 340 dc current gain h fe(2) v ce =5v, i c =1a 50 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 0.4 v base-emitter saturation voltage v be(sat) i c =500ma,i b =50ma 1.2 v transition frequency f t v ce =10v,i c =50ma, f=200mhz 200 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 20 pf classification of h fe ( 1 ) rank q r s range 85 C 170 120C 240 170 C 340 marking zq zr zs symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current 1 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 2012- 0 willas electronic corp. z 2SD874 preliminary
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors 2SD874 preliminary
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